| PART |
Description |
Maker |
| STD7LN80K5 |
100% avalanche tested
|
STMicroelectronics
|
| APT1001RSVR APT1001RSVRG |
100% Avalanche Tested
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| DTM441513 |
P-Channel 30-V (D-S) MOSFET 100 % Rg Tested
|
DinTek Semiconductor Co,.Ltd
|
| SIR880DP |
N-Channel 80 V (D-S) MOSFET 100 % UIS Tested
|
Vishay Siliconix
|
| BSP372 Q67000-S300 BSP372E-6327 BSP372E6327 |
1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管（N通道增强模式逻辑层次额定雪崩
1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| AP03N70I-HF |
100% Avalanche Test, Fast Switching, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP03N70I |
100% Avalanche Test, Fast Switching, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| GAABJ35M |
Press Fit Avalanche Automotive Rectifier Avalanche Voltage 37 to 41Volts Current 35 Amps
|
GOOD-ARK Electronics
|
| GAAB40Z |
Press Fit Avalanche Automotive Rectifier (BOSCH) Avalanche Voltage 24 to 32Volts Current 40 Amps
|
GOOD-ARK Electronics
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
